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CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION

A.B. Loginov 1 *
A.B. Loginov
* loginov.ab15@physics.msu.ru
, 
R.R. Ismagilov 1
R.R. Ismagilov
, 
P.V. Fedotov 2, 3
P.V. Fedotov
, 
I.V. Sapkov 1
I.V. Sapkov
, 
M.M. Kuvatov 1
M.M. Kuvatov
, 
B.A. Loginov 4
B.A. Loginov
, 
E.D. Obraztsova 2, 3
E.D. Obraztsova
, 
A. N. Obraztsov 1
A. N. Obraztsov
1 Physics Department, Lomonosov Moscow State University
3 National Research University “Moscow Institute of Physics and Technology”
4 National Research University of Electronic Technology
10.31857/S00444510240305e2
Published 2023-10-02
Article , Volume 165, Issue 3, 354-366
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Loginov A. et al. CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION // Journal of Experimental and Theoretical Physics. 2023. Vol. 165. No. 3. pp. 354-366.
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Loginov A., Ismagilov R., Fedotov P., Sapkov I., Kuvatov M., Loginov B., Obraztsova E., Obraztsov A. N. CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION // Journal of Experimental and Theoretical Physics. 2023. Vol. 165. No. 3. pp. 354-366.
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TY - JOUR
DO - 10.31857/S00444510240305e2
UR - https://jetp.colab.ws/publications/10.31857/S00444510240305e2
TI - CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION
T2 - Journal of Experimental and Theoretical Physics
AU - Loginov, A.B.
AU - Ismagilov, R.R.
AU - Fedotov, P.V.
AU - Sapkov, I.V.
AU - Kuvatov, M.M.
AU - Loginov, B.A.
AU - Obraztsova, E.D.
AU - Obraztsov, A. N.
PY - 2023
DA - 2023/10/02
PB - Nauka Publishers
SP - 354-366
IS - 3
VL - 165
ER -
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@article{2023_Loginov,
author = {A.B. Loginov and R.R. Ismagilov and P.V. Fedotov and I.V. Sapkov and M.M. Kuvatov and B.A. Loginov and E.D. Obraztsova and A. N. Obraztsov},
title = {CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION},
journal = {Journal of Experimental and Theoretical Physics},
year = {2023},
volume = {165},
publisher = {Nauka Publishers},
month = {Oct},
url = {https://jetp.colab.ws/publications/10.31857/S00444510240305e2},
number = {3},
pages = {354--366},
doi = {10.31857/S00444510240305e2}
}
MLA
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Loginov, A.B., et al. “CHANGES IN TRANSITION METAL DICHALCOGENIDE FILMS PROPERTIES ON VARIOUS STAGES OF CHEMICAL VAPOR DEPOSITION.” Journal of Experimental and Theoretical Physics, vol. 165, no. 3, Oct. 2023, pp. 354-366. https://jetp.colab.ws/publications/10.31857/S00444510240305e2.
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Keywords

chemical vapor deposition
monolayers
MoS2
nanowalls
transition metal dichalcogenides
WS2

Abstract

Transition metal dichalcogenides (TMDs) are attracting continuously growing attention due to a number of their unique properties. Possibilities of their application are significantly defined by improvement of obtaining methods. In this work we study formation of TMD (MoS2, WS2) mesoporous films during chemical vapor deposition with the use of gaseous H2S and thermally evaporated transition metals (Mo or W). Morphology, Raman spectra, photoluminescent properties and electrical conductivity of TMD films are investigated at different precursors concentrations and deposition duration times. The analysis revealed main stages of TMD films growth: isolated 2D monocrystalline islands formation (i), partial overlapping of these crystallites with their gradual growth in the plane of the substrate (ii), formation and growth of plate-like crystallites oriented perpendicular to the substrate surface (iv). Qualitative changes of morphology, electrical conductivity and PL properties of TMD films are explained with taking into account interaction of TMD electronic sub-system with the substrate and neighboring crystallites.

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