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REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE

A. A. Zhukov 1 *
A. A. Zhukov
* azhukov@issp.ac.ru
, 
I. E. Batov 1, 2
I. E. Batov
2 Faculty of Physics, National Research University Higher School of Economics
10.31857/S00444510240312e7
Published 2023-10-30
Article , Volume 165, Issue 3, 427-439
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Zhukov A. A., Batov I. E. REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE // Journal of Experimental and Theoretical Physics. 2023. Vol. 165. No. 3. pp. 427-439.
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Zhukov A. A., Batov I. E. REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE // Journal of Experimental and Theoretical Physics. 2023. Vol. 165. No. 3. pp. 427-439.
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TY - JOUR
DO - 10.31857/S00444510240312e7
UR - https://jetp.colab.ws/publications/10.31857/S00444510240312e7
TI - REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE
T2 - Journal of Experimental and Theoretical Physics
AU - Zhukov, A. A.
AU - Batov, I. E.
PY - 2023
DA - 2023/10/30
PB - Nauka Publishers
SP - 427-439
IS - 3
VL - 165
ER -
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@article{2023_Zhukov,
author = {A. A. Zhukov and I. E. Batov},
title = {REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE},
journal = {Journal of Experimental and Theoretical Physics},
year = {2023},
volume = {165},
publisher = {Nauka Publishers},
month = {Oct},
url = {https://jetp.colab.ws/publications/10.31857/S00444510240312e7},
number = {3},
pages = {427--439},
doi = {10.31857/S00444510240312e7}
}
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Zhukov, A. A., and I. E. Batov. “REGIMES OF ELECTRONIC TRANSPORT IN DOPED InAs NANOWIRE.” Journal of Experimental and Theoretical Physics, vol. 165, no. 3, Oct. 2023, pp. 427-439. https://jetp.colab.ws/publications/10.31857/S00444510240312e7.
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Keywords

mesoscopics
Scanning gate microscopy
semiconducting nanowires

Abstract

We report on the low temperature measurements of the magnetotransport in Si-doped InAs quantum wire in the presence of a charged tip of an atomic force microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By altering the carrier concentration with back gate voltage, we transfer the wire through several transport regimes: from residual Coulomb blockade to nonlinear resonance regime, followed by linear resonance regime and, finally, to almost homogeneous diffusion regime. We demonstrate direct relations between patterns measured with scanning gate microscopy and spectra of universal conductance fluctuations in the dependence of conductance on magnetic field (R-1(B)). Additionally, a clear sign of fractal behavior of R-1(B) curve is observed for non-linear and linear resonance transport regimes.

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