Abstract
The problem of non-stationary vapor-liquid nucleation is solved at a constant number of particles and a fixed cooling rate. An analytical approach to solving kinetic equations is developed, which correctly takes into account both the dependence of the work of cluster formation on its size and the non-ideality of the condensing vapor. Comparison with a similar approach based on the classical model reveals qualitative differences in the results. To assess the correctness of various approaches, simulation of the process under consideration was performed using the molecular dynamics method, the results of which are in qualitative and quantitative agreement with the proposed analytical model and are in much worse agreement with other approaches. Estimates for silicon oxide nucleation indicate that the significant d ifference b etween t he e quation o f s tate of c ondensing v apor and the ideal gas equation may be its universal property.
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